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나노 구조 물리 연구단
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Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions

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Title
Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions
Author(s)
Soudabeh Mashhadi; Dinh Loc Duong; Marko Burghard; Klaus Kern
Publication Date
2017-01
Journal
NANO LETTERS, v.17, no.1, pp.214 - 219
Publisher
AMER CHEMICAL SOC
Abstract
Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing attention for this purpose, as their topologically protected surface states are promising to further enhance the thermoelectric performance. While individual bismuth chalcogenide nanostructures have been studied with respect to their photothermoelectric properties, nanostructured p-n junctions of these compounds have not yet been explored. Here, we experimentally investigate the room temperature thermoelectric conversion capability of lateral heterostructures consisting of two different three-dimensional topological insulators, namely, the n-type doped Bi2Te2Se and the p-type doped Sb2Te3. Scanning photocurrent microscopy of the nanoplatelets reveals efficient thermoelectric conversion at the p-n heterojunction, exploiting hot carriers of opposite sign in the two materials. From the photocurrent data, a Seebeck coefficient difference of Delta S = 200 mu V/K was extracted, in accordance with the best values reported for the corresponding bulk materials. Furthermore, it is in very good agreement with the value of Delta S = 185 mu V/K obtained by DFT calculation taking into account the specific doping levels of the two nanostructured components. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3491
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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