Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(0 0 0 −1) surface at the nanoscale

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Title
Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(0 0 0 −1) surface at the nanoscale
Author(s)
Sung Bo Lee; Seung Jo Yoo; Kunsu Kim; Yong-Sung Kim; Young-Min Kim; Jin-Gyu Kim; Heung Nam Han
Publication Date
2017-02
Journal
Nanoscale, v.9, no.7, pp.2596 - 2602
Publisher
ROYAL SOC CHEMISTRY
Abstract
Profile imaging by in situ high-resolution transmission electron microscopy is used to elucidate reconstructions of the GaN(0 0 0 −1) surface during annealing in the TEM. We have successfully captured a detailed process of a change from the stacking sequence of the wurtzite to that of the zincblende structure in the topmost three Ga layers for the surface with nanoscale hill-and-valley structures. For ab initio calculations of the change in the sequence, a model structure is approximated by the addition of a 1 × 1 Ga layer on the GaN(0 0 0 −1) surface (i.e., 1 × 1 Ga-adlayer structure). The ab initio calculations predict that, as the surface size decreases, the 1 × 1 Ga-adlayer structure with the wurtzite stacking sequence in the topmost three Ga layers becomes destabilized against the adlayer with the zincblende stacking sequence in the surface layers, which well elucidates the experimental observation. © The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/3466
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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