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나노 구조 물리 연구단
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Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors

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Title
Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Author(s)
Byoung Hee Moon; Gang Hee Han; Hyun Kim; Homin Choi; Jung Jun Bae; Jaesu Kim; Youngjo Jin; Hye Yun Jeong; Min-Kyu Joo; Young Hee Lee; Seong Chu Lim
Publication Date
2017-03
Journal
ACS APPLIED MATERIALS & INTERFACES, v.9, no.12, pp.11240 - 11246
Publisher
AMER CHEMICAL SOC
Abstract
Although monolayer transition metal dichalcogenides (TMDs) exhibit superior optical and electrical characteristics, their use in digital switching devices is limited by incomplete understanding of the metal contact. Comparative studies of Au top and edge contacts with monolayer MoS2 reveal a temperature-dependent ideality factor and Schottky barrier height (SBH). The latter originates from inhomogeneities in MoS2 caused by defects, charge puddles, and grain boundaries, which cause local variation in the work function at Au MoS2 junctions and thus different activation temperatures for thermionic emission. However, the effect of inhomogeneities due to impurities on the SBH varies with the junction structure. The weak Au MoS2 interaction in the top contact, which yields a higher SBH and ideality factor, is more affected by inhomogeneities than the strong interaction in the edge contact. Observed differences in the SBH and ideality factor in different junction structures clarify how the SBH and inhomogeneities can be controlled in devices containing TMD materials © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3449
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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