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Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

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Title
Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes
Author(s)
Wang-Taek Hwang; Misook Min; Hyunhak Jeong; Dongku Kim; Jingon Jang; Daekyung Yoo; Yeonsik Jang; Jun-Woo Kim; Jiyoung Yoon; Seungjun Chung; Gyu-Chul Yi; Hyoyoung Lee; Gunuk Wang; Takhee Lee
Publication Date
2016-11
Journal
NANOTECHNOLOGY, v.27, no.47, pp.475201 -
Publisher
IOP PUBLISHING LTD
Abstract
We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude. © 2016 IOP Publishing Ltd
URI
https://pr.ibs.re.kr/handle/8788114/3242
ISSN
0957-4484
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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