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나노 구조 물리 연구단
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Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide

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Title
Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide
Author(s)
Hye Min Oh; Hyun Jeong; Gang Hee Han; Hyun Kim; Jung Ho Kim; Si Young Lee; Seung Yol Jeong; Sooyeon Jeong; Doo Jae Park; Ki Kang Kim; Young Hee Lee; Mun Seok Jeong
Publication Date
2016-11
Journal
ACS NANO, v.10, no.11, pp.10446 - 10453
Publisher
AMER CHEMICAL SOC
Abstract
Modulation of the carrier concentration and electronic type of monolayer (1L) MoS2 is highly important for applications in logic circuits, solar cells, and light-emitting diodes. Here, we demonstrate the tuning of the electronic properties of large-area 1L-MoS2 using graphene oxide (GO). GO sheets are well-known as hole injection layers since they contain electron-withdrawing groups such as carboxyl, hydroxyl, and epoxy. The optical and electronic properties of GO-treated 1L-MoS2 are dramatically changed. The photoluminescence intensity of GO-treated 1L-MoS2 is increases by more than 470% compared to the pristine sample because of the increase in neutral exciton contribution. In addition, the A1g peak in Raman spectra shifts considerably, revealing that GO treatment led to the formation of p-type doped 1L-MoS2. Moreover, the current vs voltage (I-V) curves of GO-coated 1L-MoS2 field effect transistors show that the electron concentration of 1L-MoS2 is significantly lower in comparison with pristine 1L-MoS2. Current rectification is also observed from the I-V curve of the lateral diode structure with 1L-MoS2 and 1L-MoS2/GO, indicating that the electronic structure of MoS2 is significantly modulated by the electron-withdrawing functional group of GO. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3228
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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