BiFeO3 epitaxial thin films and devices: past, present and future
Highly Cited Paper
Cited 106 time in
Cited 0 time in
- BiFeO3 epitaxial thin films and devices: past, present and future
- Daniel Sando; A Barthélémy; M Bibes
- JOURNAL OF PHYSICS-CONDENSED MATTER, v.26, no.47, pp.473201 -
- IOP PUBLISHING LTD
- The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting. © 2014 IOP Publishing Ltd.
Appears in Collections:
- Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
- Files in This Item:
- Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.