BiFeO3 epitaxial thin films and devices: past, present and futureHighly Cited Paper
DC Field | Value | Language |
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dc.contributor.author | Daniel Sando | - |
dc.contributor.author | A Barthélémy | - |
dc.contributor.author | M Bibes | - |
dc.date.available | 2016-12-22T01:43:52Z | - |
dc.date.created | 2016-12-08 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/3075 | - |
dc.description.abstract | The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting. © 2014 IOP Publishing Ltd. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | BiFeO3, multiferroics, devices, oxide electronics, strain engineering | - |
dc.title | BiFeO3 epitaxial thin films and devices: past, present and future | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000344728000004 | - |
dc.identifier.scopusid | 2-s2.0-84908582423 | - |
dc.identifier.rimsid | 57859 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Daniel Sando | - |
dc.identifier.doi | 10.1088/0953-8984/26/47/473201 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.26, no.47, pp.473201 | - |
dc.citation.title | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.citation.volume | 26 | - |
dc.citation.number | 47 | - |
dc.citation.startPage | 473201 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 106 | - |
dc.description.scptc | 108 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FERROELECTRIC DOMAIN-WALLS | - |
dc.subject.keywordPlus | INDUCED PHASE-TRANSITIONS | - |
dc.subject.keywordPlus | ELECTRIC-FIELD CONTROL | - |
dc.subject.keywordPlus | MULTIFERROIC BIFEO3 | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | NEUTRON-DIFFRACTION | - |
dc.subject.keywordPlus | NANOSCALE CONTROL | - |
dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
dc.subject.keywordPlus | BISMUTH FERRITE | - |
dc.subject.keywordPlus | EXCHANGE BIAS | - |
dc.subject.keywordAuthor | BiFeO3 | - |
dc.subject.keywordAuthor | multiferroics | - |
dc.subject.keywordAuthor | devices | - |
dc.subject.keywordAuthor | oxide electronics | - |
dc.subject.keywordAuthor | strain engineering | - |