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강상관계 물질 연구단
강상관계 물질 연구단
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Tunneling transport of mono- and few-layers magnetic van der waals mnps3

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Title
Tunneling transport of mono- and few-layers magnetic van der waals mnps3
Author(s)
Sungmin Lee; Ki-Young Choi; Sangik Lee; Bae Ho Park; Je-Geun Park
Publication Date
2016-08
Journal
APL Materials, v.4, no.8, pp.086108 -
Publisher
AMER INST PHYSICS
Abstract
We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm. © Author(s) 2016.
URI
http://pr.ibs.re.kr/handle/8788114/3058
ISSN
2166-532X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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