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강상관계물질연구단
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Tunneling transport of mono- and few-layers magnetic van der waals mnps3

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dc.contributor.authorSungmin Lee-
dc.contributor.authorKi-Young Choi-
dc.contributor.authorSangik Lee-
dc.contributor.authorBae Ho Park-
dc.contributor.authorJe-Geun Park-
dc.date.available2016-12-22T01:43:40Z-
dc.date.created2016-12-02-
dc.date.issued2016-08-
dc.identifier.issn2166-532X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3058-
dc.description.abstractWe have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm. © Author(s) 2016.-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.titleTunneling transport of mono- and few-layers magnetic van der waals mnps3-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000383910000009-
dc.identifier.scopusid2-s2.0-85026473818-
dc.identifier.rimsid57827ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSungmin Lee-
dc.contributor.affiliatedAuthorKi-Young Choi-
dc.contributor.affiliatedAuthorJe-Geun Park-
dc.identifier.doi10.1063/1.4961211-
dc.identifier.bibliographicCitationAPL MATERIALS, v.4, no.8, pp.086108-
dc.citation.titleAPL MATERIALS-
dc.citation.volume4-
dc.citation.number8-
dc.citation.startPage086108-
dc.date.scptcdate2018-10-01-
dc.description.wostc6-
dc.description.scptc7-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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