BROWSE

Related Scientist

Researcher

나노 구조 물리 연구단
나노구조물리 연구단
more info

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Cited 3 time in webofscience Cited 0 time in scopus
173 Viewed 6 Downloaded
Title
Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film
Author(s)
Jeongmin Park; Haeyong Kang; Kyeong Tae Kang; Yoojoo Yun; Young Hee Lee; Woo Seok Choi; Dongseok Suh
Publication Date
2016-02
Journal
NANO LETTERS, v.16, no.3, pp.1754 - 1759
Publisher
AMER CHEMICAL SOC
Abstract
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2905
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film_Nano Letters_서동석.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse