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Tailoring photoluminescence of monolayer transition metal dichalcogenides

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Title
Tailoring photoluminescence of monolayer transition metal dichalcogenides
Author(s)
Minh Dao Tran; Ji-Hee Kim; Young Hee Lee
Publication Date
2016-09
Journal
CURRENT APPLIED PHYSICS, v.16, no.9, pp.1159 - 1174
Publisher
ELSEVIER SCIENCE BV
Abstract
Single layer semiconductor transition metal dichalcogenides (TMDs) possess outstanding properties that are desirable for development of 2D nanoelectronics and optoelectronics. One of outstanding properties is large exciton and trion binding energy rendering them to be stable even at room temperature, which governed nearly all optical characteristics observed in monolayer TMDs. However, behaviors of excitons and trions are very sensitive to external factors, including strain, dielectric of surrounding environment, electrical and chemical doping, and temperature. These features provide various approaches to manipulate in controllable manner optical and electronic properties of monolayer TMDs and their in-depth understanding is essential to exploit them for future optoelectronic devices. Here we review basic exciton properties and the impacts of charged doping, strain, dielectric screening, temperature and excitation intensity on excitonic behaviors reflected via photoluminescence spectra for monolayer of TMDs. © 2016 Elsevier B.V
URI
https://pr.ibs.re.kr/handle/8788114/2880
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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