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나노 구조 물리 연구단
나노구조물리 연구단
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Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition

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Title
Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition
Author(s)
Ji-Hoon Park; Choi S.H.; Jiong Zhao; Seunghyun Song; Yang W.; Kim S.M.; Kim K.K.; Young Hee Lee
Publication Date
2016-09
Journal
CURRENT APPLIED PHYSICS, v.16, no.9, pp.1229 - 1235
Publisher
ELSEVIER SCIENCE BV
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) is a thin insulating material that can be used to enhance the electrical and optical properties of other 2D materials when used as a substrate or a capping layer, owing to its absence of dangling bonds on the surface. The use of multilayer h-BN films is often required in such applications to realize high material performance. However, previous works have focused mostly on the synthesis of monolayer or few-layer h-BN films. Herein we report a method to control the thickness of h-BN film up to the centimeter scale by means of plasma-enhanced chemical vapor deposition (PECVD). The thickness of the h-BN film is controlled by varying the deposition time of borazine precursor onto a monolayer h-BN film on a Pt foil substrate at room temperature. The resultant film is then annealed at high temperature (1050 °C) to increase the crystallinity of the h-BN. Monolayer h-BN film grown on Pt foil used as a buffer layer is of importance to improve uniformity and smooth surface of the multilayer h-BN film over the whole area. We further demonstrate that our multilayer h-BN film is very useful in graphene/h-BN/SiO2 heterostructures as a charge-blocking layer between graphene and SiO2. © 2016 Elsevier B.V
URI
https://pr.ibs.re.kr/handle/8788114/2879
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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