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나노 구조 물리 연구단
나노구조물리 연구단
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In Situ Chemical Vapor Deposition of Graphene and Hexagonal Boron Nitride Heterostructures

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Title
In Situ Chemical Vapor Deposition of Graphene and Hexagonal Boron Nitride Heterostructures
Author(s)
Qinke Wu; Winadda Wongwiriyapan; Ji-Hoon Park; Sangwoo Park; Seong Jun Jung; Taehwan Jeong; Sungjoo Lee; Young Hee Lee; Young Jae Song
Publication Date
2016-09
Journal
CURRENT APPLIED PHYSICS, v.16, no.9, pp.1175 - 1191
Publisher
ELSEVIER SCIENCE BV
Abstract
Graphene and hexagonal boron nitride (hBN) heterostructures have attracted considerable attention in recent years to keep graphene's unique properties with ideal two-dimensional protective layers of h-BN for use in a wide range of potential applications. Depending on the application goals and the fabrication process, several structural configurations of graphene and hBN have been suggested; (1) lateral heterostructure incorporated in the in-plane direction on the same layer like graphene-hBN and (2) vertical heterostructures stacking a layer over different layers like graphene/hBN(GB), hBN/graphene(BG) or hBN/graphene/hBN(BGB). These artificial heterostructures can induce new properties or preserve the ideal unique properties beyond the inevitable limit of pristine graphene caused during the conventional fabrication. In this perspective, recent advances in selective synthesis or controllable fabrication of graphene and hBN heterostructures are summarized. In particular, with practical scalability, high uniformity and quality, in situ chemical vapor deposition growth of in-plane and vertical graphene and hBN heterostructures are highlighted. © 2016 Elsevier B.V.
URI
https://pr.ibs.re.kr/handle/8788114/2860
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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