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Highly active and stable layered ternary transition metal chalcogenide for hydrogen evolution reaction

Cited 45 time in webofscience Cited 46 time in scopus
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Title
Highly active and stable layered ternary transition metal chalcogenide for hydrogen evolution reaction
Author(s)
Anand P. Tiwari; Doyoung Kim; Yongshin Kim; Prakash O.; Hyoyoung Lee
Subject
Hydrogen evolution reaction, ; Se-doping, ; Single layer, ; Ternary transition metals chalcogenide
Publication Date
2016-10
Journal
NANO ENERGY, v.28, pp.366 - 372
Publisher
Elsevier BV
Abstract
Layered ternary transition metal chalcogenides (TTMCs) material has great potentials that can overcome to the limitation of active sites which is challenging in binary transition metal chalcogenides (BTMC), such as MoS2, towards electrochemical hydrogen production. Here, we demonstrate TTMC material which contains two transition metals Cu and Mo with chalcogen S. The TTMC, Cu2MoS4 has been successfully synthesized by a facile solution-processed method. Moreover, by anion doping such as Se in as the synthesized Cu2MoS4, it has been found that TTMC can be exfoliated into single layer nanosheets. Furthermore, by controlling the number of layers, single layers TTMC exhibit the highest electrocatalytic activity towards hydrogen evolution reaction (HER) because the single layers can provide more catalytic active sites than multilayers and bulk. The onset potential for hydrogen generation is −96 mV for single layer TTMC electrode material with corresponding Tafel slope 52 mV/decade. After 1000 cycles with continuous electrolysis in acid electrolyte for 15 h, the electrode material preserves its structure and robust catalytic activity perfectly. Our new TTMC materials show highly active electrocatalytic performance and high stability which overcome the intrinsic limitation of BTMC. As a result, our work can guide new strategy for the developments of real applications of TMCs in HER. © 2016 Elsevier Ltd.
URI
https://pr.ibs.re.kr/handle/8788114/2852
DOI
10.1016/j.nanoen.2016.08.065
ISSN
2211-2855
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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