Large Work Function Modulation of Monolayer MoS2 by Ambient Gases

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Title
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases
Author(s)
Si Young Lee; Kim U.J.; Chung J.; Honggi Nam; Hye Yun Jeong; Gang Hee Han; Hyun Kim; Hye Min Oh; Lee H.; Kim H.; Roh Y.-G.; Kim J.; Hwang S.W.; Park Y.; Young Hee Lee
Publication Date
2016-06
Journal
ACS NANO, v.10, no.6, pp.6100 - 6107
Publisher
AMER CHEMICAL SOC
Abstract
Although two-dimensional monolayer transition-metal dichalcogenides reveal numerous unique features that are inaccessible in bulk materials, their intrinsic properties are often obscured by environmental effects. Among them, work function, which is the energy required to extract an electron from a material to vacuum, is one critical parameter in electronic/optoelectronic devices. Here, we report a large work function modulation in MoS2 via ambient gases. The work function was measured by an in situ Kelvin probe technique and further confirmed by ultraviolet photoemission spectroscopy and theoretical calculations. A measured work function of 4.04 eV in vacuum was converted to 4.47 eV with O2 exposure, which is comparable with a large variation in graphene. The homojunction diode by partially passivating a transistor reveals an ideal junction with an ideality factor of almost one and perfect electrical reversibility. The estimated depletion width obtained from photocurrent mapping was ∼200 nm, which is much narrower than bulk semiconductors. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2817
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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