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나노 구조 물리 연구단
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

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Title
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
Author(s)
Jang S.K.; Youn J.; Young Jae Song; Lee S.
Publication Date
2016-07
Journal
SCIENTIFIC REPORTS, v.6, no., pp.30449 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality © The Author(s) 2016
URI
http://pr.ibs.re.kr/handle/8788114/2811
DOI
10.1038/srep30449
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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