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나노 구조 물리 연구단
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Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics

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Title
Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics
Author(s)
Park H.J.; Min Su Kim; Jeongyong Kim; Joo J.
Publication Date
2016-10
Journal
CURRENT APPLIED PHYSICS, v.16, no.10, pp.1320 - 1325
Publisher
ELSEVIER SCIENCE BV
Abstract
The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor. © 2016 Elsevier B.V
URI
https://pr.ibs.re.kr/handle/8788114/2788
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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