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The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

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Title: The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

Author(s): Cheng-Tai Kuo; Karuppannan Balamurugan; Shiu H.W.; Hyun Ju Park; Soobin Sinn; Michael Neumann; Han M.; Chang Y.J.; Chen C.-H.; Hyeong-Do Kim; Je-Geun Park; Tae Won Noh

Subject: Band offset, ; Exfoliation, ; Nickel phosphorous trisulfide, ; Photoemission spectroscopy, ; Zinc oxide

Abstract: We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface. © 2016 Elsevier B.V. All rights reserved