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강상관계물질연구단
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The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

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dc.contributor.authorCheng-Tai Kuo-
dc.contributor.authorKaruppannan Balamurugan-
dc.contributor.authorShiu H.W.-
dc.contributor.authorHyun Ju Park-
dc.contributor.authorSoobin Sinn-
dc.contributor.authorMichael Neumann-
dc.contributor.authorHan M.-
dc.contributor.authorChang Y.J.-
dc.contributor.authorChen C.-H.-
dc.contributor.authorHyeong-Do Kim-
dc.contributor.authorJe-Geun Park-
dc.contributor.authorTae Won Noh-
dc.date.available2016-07-19T07:40:16Z-
dc.date.created2016-02-19-
dc.date.issued2016-03-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2684-
dc.description.abstractWe have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface. © 2016 Elsevier B.V. All rights reserved-
dc.description.uri1-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectBand offset-
dc.subjectExfoliation-
dc.subjectNickel phosphorous trisulfide-
dc.subjectPhotoemission spectroscopy-
dc.subjectZinc oxide-
dc.titleThe energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000369995000029-
dc.identifier.scopusid2-s2.0-84954411768-
dc.identifier.rimsid22375ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorCheng-Tai Kuo-
dc.contributor.affiliatedAuthorKaruppannan Balamurugan-
dc.contributor.affiliatedAuthorHyun Ju Park-
dc.contributor.affiliatedAuthorSoobin Sinn-
dc.contributor.affiliatedAuthorMichael Neumann-
dc.contributor.affiliatedAuthorHyeong-Do Kim-
dc.contributor.affiliatedAuthorJe-Geun Park-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1016/j.cap.2016.01.001-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.16, no.3, pp.404 - 408-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume16-
dc.citation.number3-
dc.citation.startPage404-
dc.citation.endPage408-
dc.date.scptcdate2018-10-01-
dc.description.wostc5-
dc.description.scptc4-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorBand offset-
dc.subject.keywordAuthorExfoliation-
dc.subject.keywordAuthorNickel phosphorous trisulfide-
dc.subject.keywordAuthorPhotoemission spectroscopy-
dc.subject.keywordAuthorZinc oxide-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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