The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

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Title
The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO
Author(s)
Cheng-Tai Kuo; Karuppannan Balamurugan; Shiu H.W.; Hyun Ju Park; Soobin Sinn; Michael Neumann; Han M.; Chang Y.J.; Chen C.-H.; Hyeong-Do Kim; Je-Geun Park; Tae Won Noh
Publication Date
2016-03
Journal
CURRENT APPLIED PHYSICS, v.16, no.3, pp.404 - 408
Publisher
ELSEVIER SCIENCE BV
Abstract
We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface. © 2016 Elsevier B.V. All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/2684
ISSN
1567-1739
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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