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나노 구조 물리 연구단
나노구조물리 연구단
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Oxidation Effect in Octahedral Hafnium Disulfide Thin Film

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Title
Oxidation Effect in Octahedral Hafnium Disulfide Thin Film
Author(s)
Sang Hoon Chae; Youngjo Jin; Tae Soo Kim; Dong Seob Chung; Hyunyeong Na; Honggi Nam; Hyun Kim; David J. Perello; Hye Yun Jeong; Thuc Hue Ly; Young Hee Lee
Publication Date
2016-01
Journal
ACS NANO, v.10, no.1, pp.1309 - 1316
Publisher
AMER CHEMICAL SOC
Abstract
Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (I-on/I-off approximate to 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2555
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Oxidation Effect in Octahedral Hafnium Disulfide Thin Film_ACS Nano_채상훈.pdfDownload

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