Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain Highly Cited Paper

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Title
Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain
Author(s)
Seunghyun Song; Dong Hoon Keum; Suyeon Cho; David J. Perello; Yunseok Kim; Young Hee Lee
Publication Date
2016-01
Journal
NANO LETTERS, v.16, no.1, pp.188 - 193
Publisher
AMER CHEMICAL SOC
Abstract
We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance similar to 10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials
URI
https://pr.ibs.re.kr/handle/8788114/2554
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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