Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

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Title
Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films
Author(s)
Dong Jik Kim; Connell J.G.; Seo S.S.A.; Gruverman A.
Publication Date
2016-04
Journal
NANOTECHNOLOGY, v.27, no.15, pp.155705 -
Publisher
IOP PUBLISHING LTD
Abstract
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. © 2016 IOP Publishing Ltd
URI
https://pr.ibs.re.kr/handle/8788114/2481
ISSN
0957-4484
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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