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Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

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dc.contributor.authorDong Jik Kim-
dc.contributor.authorConnell J.G.-
dc.contributor.authorSeo S.S.A.-
dc.contributor.authorGruverman A.-
dc.date.available2016-05-12T08:53:07Z-
dc.date.created2016-04-18-
dc.date.issued2016-04-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2481-
dc.description.abstractAlthough enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. © 2016 IOP Publishing Ltd-
dc.description.uri1-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectback-to-back Schottky barrier-
dc.subjectconductive atomic force microscopy-
dc.subjectdomain wall conductivity-
dc.subjectferroelectric-
dc.subjecthexagonal manganite-
dc.subjectsemiconducting-
dc.titleDomain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000371343500017-
dc.identifier.scopusid2-s2.0-84960081315-
dc.identifier.rimsid55133-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorDong Jik Kim-
dc.identifier.doi10.1088/0957-4484/27/15/155705-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.27, no.15, pp.155705-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume27-
dc.citation.number15-
dc.citation.startPage155705-
dc.date.scptcdate2018-10-01-
dc.description.wostc2-
dc.description.scptc2-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorback-to-back Schottky barrier-
dc.subject.keywordAuthorconductive atomic force microscopy-
dc.subject.keywordAuthordomain wall conductivity-
dc.subject.keywordAuthorferroelectric-
dc.subject.keywordAuthorhexagonal manganite-
dc.subject.keywordAuthorsemiconducting-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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