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Bin Wang
다차원 탄소재료 연구단
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Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns

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Title
Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns
Author(s)
Bin Wang; Ming Huang; Li Tao; Sun Hwa Lee; A-Rang Jang; Bao-Wen Li; Hyeon Suk Shin; Deji Akinwande; Rodney S. Ruoff
Publication Date
2016-01
Journal
ACS NANO, v.10, no.1, pp.1404 - 1410
Publisher
AMER CHEMICAL SOC
Abstract
We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled mono layer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12x) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces © 2015 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2408
ISSN
1936-0851
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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