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Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine

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Title
Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine
Author(s)
Pak, J.; Jang, J.; Cho, K.; Kim, T.-Y.; Kim, J.-K.; Song, Y.; Hong, W.-K.; Min, M.; Hyoyoung Lee; Lee, T.
Publication Date
2015-11
Journal
NANOSCALE, v.7, no.44, pp.18780 - 18788
Publisher
ROYAL SOC CHEMISTRY
Abstract
Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared with the pristine MoS2 FETs, caused by more electron-hole pairs separation at the p-n interface. Furthermore, we found the optimized CuPc thickness (∼2 nm) on the MoS2 surface for the best performance as a photodetector with a photoresponsivity of ∼1.98 A W-1, a detectivity of ∼6.11 × 1010 Jones, and an external quantum efficiency of ∼12.57%. Our study suggests that the MoS2 vertical hybrid structure with organic material can be promising as efficient photodetecting devices and optoelectronic circuits. © 2015 The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/2385
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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