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나노 구조 물리 연구단
나노구조물리 연구단
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Selective Area Band Engineering of Graphene using Cobalt-Mediated Oxidation

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Title
Selective Area Band Engineering of Graphene using Cobalt-Mediated Oxidation
Author(s)
Bazylewski, PF; Van Luan Nguyen; Bauer, RPC; Hunt, AH; McDermott, EJG; Leedahl, BD; Kukharenko, AI; Cholakh, SO; Kurmaev, EZ; Blaha, P; Moewes, A; Lee, YH; Chang, GS
Publication Date
2015-10
Journal
SCIENTIFIC REPORTS, v.5, no., pp.15380 -
Publisher
NATURE PUBLISHING GROUP
Abstract
This study reports a scalable and economical method to open a band gap in single layer graphene by deposition of cobalt metal on its surface using physical vapor deposition in high vacuum. At low cobalt thickness, clusters form at impurity sites on the graphene without etching or damaging the graphene. When exposed to oxygen at room temperature, oxygen functional groups form in proportion to the cobalt thickness that modify the graphene band structure. Cobalt/Graphene resulting from this treatment can support a band gap of 0.30 ‰eV, while remaining largely undamaged to preserve its structural and electrical properties. A mechanism of cobalt-mediated band opening is proposed as a two-step process starting with charge transfer from metal to graphene, followed by formation of oxides where cobalt has been deposited. Contributions from the formation of both CoO and oxygen functional groups on graphene affect the electronic structure to open a band gap. This study demonstrates that cobalt-mediated oxidation is a viable method to introduce a band gap into graphene at room temperature that could be applicable in electronics applications.
URI
http://pr.ibs.re.kr/handle/8788114/2285
DOI
10.1038/srep15380
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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