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나노 구조 물리 연구단
나노구조물리 연구단
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Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

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Title
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains
Author(s)
Wu, QK; Ji-Hoon Park; Park, S; Jung, SJ; Suh, H; Park, N; Wongwiriyapan, W; Lee, S; Young Hee Lee; Young Jae Song
Publication Date
2015-11
Journal
SCIENTIFIC REPORTS, v.5, no., pp.16159 -
Publisher
NATURE PUBLISHING GROUP
Abstract
A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 mu m to more than 100 mu m) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can be selectively grown by controlling Cu-annealing time under argon atmosphere prior to h-BN growth, which provides the h-BN shape varies in triangular, trapezoidal, hexagonal and complex shapes. The uniform crystalline orientation of h-BN from different nucleation seeds can be easily confirmed by polarized optical microscopy (POM) with a liquid crystal coating. Furthermore, seamlessly merged h-BN flakes without structural domain boundaries were evidence by a selective hydrogen etching after a full coverage of a h-BN film was achieved. This seamless large-area and atomic monolayer of single crystalline h-BN film can offer as an ideal and practical template of graphene-based devices or alternative two-dimensional materials for industrial applications with scalability.
URI
http://pr.ibs.re.kr/handle/8788114/2240
DOI
10.1038/srep16159
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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