Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure

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Title
Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure
Author(s)
Soo-Hyon Phark; Seung Chul Chae
Publication Date
2015-04
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.15, pp.155102 -
Publisher
IOP PUBLISHING LTD
Abstract
We report on an oxygen partial pressure dependence of the unipolar resistance switching behavior of a Pt/NiO/Pt structure. By varying the oxygen partial pressure from 1 to 50 mTorr during film growth, we observed the reliable resistance switching behaviors in the films grown at high oxygen partial pressure, whereas we observed a failure of resistance switching behavior for the film grown at low pressure. In situ x-ray photoemission spectroscopy revealed that the unipolar resistance switching behavior was observed prominently in the NiO film of almost bulk stoichiometry accompanying a considerable off-stoichiometry near the NiO-Pt interface. Based on these observations, we extend the understanding of the effect of the initial defect configuration on the reliability of resistance switching in the Pt/NiO/Pt structure. © 2015 IOP Publishing Ltd
URI
https://pr.ibs.re.kr/handle/8788114/2066
ISSN
0022-3727
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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