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Initial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure

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dc.contributor.authorSoo-Hyon Phark-
dc.contributor.authorSeung Chul Chae-
dc.date.available2016-01-07T09:14:25Z-
dc.date.created2015-04-06-
dc.date.issued2015-04-
dc.identifier.issn0022-3727-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2066-
dc.description.abstractWe report on an oxygen partial pressure dependence of the unipolar resistance switching behavior of a Pt/NiO/Pt structure. By varying the oxygen partial pressure from 1 to 50 mTorr during film growth, we observed the reliable resistance switching behaviors in the films grown at high oxygen partial pressure, whereas we observed a failure of resistance switching behavior for the film grown at low pressure. In situ x-ray photoemission spectroscopy revealed that the unipolar resistance switching behavior was observed prominently in the NiO film of almost bulk stoichiometry accompanying a considerable off-stoichiometry near the NiO-Pt interface. Based on these observations, we extend the understanding of the effect of the initial defect configuration on the reliability of resistance switching in the Pt/NiO/Pt structure. © 2015 IOP Publishing Ltd-
dc.description.uri1-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectNiO, in situ x-ray photoemission spectroscopy, RRAM-
dc.titleInitial defect configuration in NiO film for reliable unipolar resistance switching of Pt/NiO/Pt structure-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000351856600005-
dc.identifier.scopusid2-s2.0-84925432798-
dc.identifier.rimsid19177ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSoo-Hyon Phark-
dc.identifier.doi10.1088/0022-3727/48/15/155102-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.15, pp.155102-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume48-
dc.citation.number15-
dc.citation.startPage155102-
dc.date.scptcdate2018-10-01-
dc.description.wostc3-
dc.description.scptc3-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordAuthorNiO-
dc.subject.keywordAuthorin situ x-ray photoemission spectroscopy-
dc.subject.keywordAuthorRRAM-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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