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Mark Hermann Rummeli
나노구조물리 연구단
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Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases

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Title
Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases
Author(s)
Bachmatiuk, A; Boeckl, J; Smith, H; Ibrahim, I; Gemming, T; Oswald, S; Kazmierczak, W; Makarov, D; Schmidt, OG; Eckert, J; Fu, L; Mark H. Rummeli
Publication Date
2015-08
Journal
JOURNAL OF PHYSICAL CHEMISTRY C, v.119, no.31, pp.17965 - 17970
Publisher
AMER CHEMICAL SOC
Abstract
Amorphous carbon thin films are technologically important materials that range in use from the semiconductor industry to corrosion-resistant films. Their conversion to crystalline graphene layers has long been pursued; however, typiCally this requires excessively high temperatures. Thus, crystallization routes which require reduced temperatures are important. Moreover, the ability to crystallize amorphous catbon at reduced, teinpetatures without a catalyst could pave the way for practical graphene synthesis for device fabrication without the need for transfer or post-transfer gate deposition. To this end we demonstrate a practical and facile method to crystallize deposited amorphous Carbon films to high,quality graphene layers at reduced annealing temperatures by introducing oxidizing gases during the process. The reactive gases react with regions of higher strain (energy) in the syStel-n and accelerate the graphitization process by minimizing -criss-cross-linkages and accelerating C-C bond rearrangement at defects. In other words, the movement of crystallite boundaries is accelerated along the carbon hexagon planes by removing obstacles for Crystallite coalescence
URI
https://pr.ibs.re.kr/handle/8788114/1948
ISSN
1932-7447
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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