Herein, we will propose a new application possibility of epsilonnear-
zero (ENZ) materials: high resolution wide-field imaging. We show
that the resolution can be dramatically enhanced by simply inserting a thin
epsilon-near-zero (ENZ) material between the sample and substrate. By
performing metal half-plane imaging, we experimentally demonstrate that
the resolution could be enhanced by about 47% with a 300-nm-thick SiO2
interlayer, an ENZ material at 8-μm-wavelength (1250 cm−1). The physical
origin of the resolution enhancement is the strong conversion of diffracted
near fields to quasi-zeroth order far fields enabled by the directive emission
of ENZ materials.