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나노 구조 물리 연구단
나노구조물리 연구단
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Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations Highly Cited Paper

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Title
Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
Author(s)
Gang Hee Han; Kybert, NJ; Naylor, CH; Lee, BS; Ping, JL; Park, JH; Kang, J; Si Young Lee; Young Hee Lee; Agarwal, R; Johnson, ATC
Publication Date
2015-01
Journal
NATURE COMMUNICATIONS, v.6, no., pp.6128 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Monolayer transition metal dichalcogenides are materials with an atomic structure complementary to graphene but diverse properties, including direct energy bandgaps, which makes them intriguing candidates for optoelectronic devices. Various approaches have been demonstrated for the growth of molybdenum disulphide (MoS2) on insulating substrates, but to date, growth of isolated crystalline flakes has been demonstrated at random locations only. Here we use patterned seeds of molybdenum source material to grow flakes of MoS2 at predetermined locations with micrometre-scale resolution. MoS2 flakes are predominantly monolayers with high material quality, as confirmed by atomic force microscopy, transmission electron microscopy and Raman and photoluminescence spectroscopy. As the monolayer flakes are isolated at predetermined locations, transistor fabrication requires only a single lithographic step. Device measurements exhibit carrier mobility and on/off ratio that exceed 10 cm2V1 s1 and 106, respectively. The technique provides a path for in-depth physical analysis of monolayer MoS2 and fabrication of MoS2-based integrated circuits.
URI
http://pr.ibs.re.kr/handle/8788114/1794
DOI
10.1038/ncomms7128
ISSN
2041-1723
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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