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Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

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Title
Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches
Author(s)
Cho E.H.; Song W.G.; Park C.J.; Jeongyong Kim; Kim S.; Joo J.
Publication Date
2015-03
Journal
NANO RESEARCH, v.8, no.3, pp.790 - 800
Publisher
TSINGHUA UNIV PRESS
Abstract
Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements.[Figure not available: see fulltext.] © 2015, Tsinghua University Press and Springer-Verlag Berlin Heidelberg
URI
https://pr.ibs.re.kr/handle/8788114/1773
ISSN
1998-0124
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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