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나노 구조 물리 연구단
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Mechanisms of enhanced light emission in GaN-based light-emitting diodes by V-shaped micropits

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Title
Mechanisms of enhanced light emission in GaN-based light-emitting diodes by V-shaped micropits
Author(s)
Hyun Jeong; Ji-Hee Kim; Hong, CH; Suh, EK; Mun Seok Jeong
Publication Date
2015-06
Journal
OPTICAL MATERIALS EXPRESS, v.5, no.6, pp.1306 - 1315
Publisher
OPTICAL SOC AMER
Abstract
We have investigated the light emission mechanisms of V-shaped, hexagonal-micropit-arranged, InGaN/GaN light-emitting diodes (HMA-LEDs). By near-field scanning optical microscopy and the confocal scanning electroluminescence microscopy, we found that enhanced light output of HMA-LED was significantly contributed by not only improved light-extraction efficiency but also locally improved crystalline quality near the micropit. Etch pit density and cross-sectional transmission electron microscope image indicate that threading dislocation (TD) bending lead to decrease the TD density near the micropit. Furthermore, partially linearly polarized light from the inclined facets of the HMA-LEDs was observed. (C) 2015 Optical Society of Americ
URI
https://pr.ibs.re.kr/handle/8788114/1747
ISSN
2159-3930
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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