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원자제어 저차원 전자계 연구단
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The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current

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Title
The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current
Author(s)
Inchan Hwang; Yong-Jun Cho; Myoung-Jae Lee; Moon-Ho Jo
Publication Date
2015-05
Journal
APPLIED PHYSICS LETTERS, v.106, no.19, pp.193106-1 - 193106-5
Publisher
AMER INST PHYSICS
Abstract
Nanowire (NW) structures offer a model system for investigating material and scaling properties of phase change random access memory (PCRAM) at the nanometer scale. Here, we investigate the relationship between nanowire device contact resistance and reset current (Ireset) for varying diameters of NWs. Because the reset switching current directly affects possible device density of PCRAM NWs, it is considered one of the most important parameters for PCRAM. We found that the reset switching current, Ireset, was inversely proportional to the contact resistance of PCRAM NW devices decreasing as NW diameter was reduced from 250 nm to 20 nm. Our observations suggest that the reduction of power consumption of PCRAM in the sub-lithographic regime can be achieved by lowering the contact resistance. © 2015 AIP Publishing LLC
URI
http://pr.ibs.re.kr/handle/8788114/1676
DOI
10.1063/1.4921226
ISSN
0003-6951
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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