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Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

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Title
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
Author(s)
Debottam Daw; Houcine Bouzid; Jung, Moonyoung; Suh, Dongseok; Chandan Biswas; Young Hee Lee
Publication Date
2024-03
Journal
Advanced Materials, v.36, no.13
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Abstract
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec−1 with an average sub-10 SS across five decades with on-off ratio exceeding 107, by simultaneous improvement of transport and body factors in monolayer MoS2-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics. © 2024 Wiley-VCH GmbH.
URI
https://pr.ibs.re.kr/handle/8788114/14972
DOI
10.1002/adma.202304338
ISSN
0935-9648
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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