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Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

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Title
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
Author(s)
Ashok Mondal; Chandan Biswas; Sehwan Park; Wujoon Cha; Kang, Seoung-Hun; Yoon, Mina; Soo Ho Choi; Ki Kang Kim; Young Hee Lee
Publication Date
2023-09
Journal
Nature Nanotechnology, v.19, pp.34 - 43
Publisher
Nature Publishing Group
Abstract
© 2023 Springer Nature Limited. Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~1011 at 15 K. Such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.
URI
https://pr.ibs.re.kr/handle/8788114/14704
DOI
10.1038/s41565-023-01497-x
ISSN
1748-3387
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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