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Gate-controlled Multispectral Response in Graphene-Based Heterostructure Photodetector

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Title
Gate-controlled Multispectral Response in Graphene-Based Heterostructure Photodetector
Author(s)
Vu Khac Dat; Chengyun Hong; Minh Dao Tran; Chau, Tuan Khanh; Do, Van Dam; Tran, Trang Thu; Nguyen, Minh Chien; Duong, Hai Phuong; Saejin Oh; Yu, Woo Jong; Kim, Jeongyong; Ji-Hee Kim
Publication Date
2023-10
Journal
Advanced Electronic Materials, v.10, no.1
Publisher
John Wiley and Sons Inc
Abstract
Copyright © 1999-2023 John Wiley & Sons, Inc. All rights reserved. Multispectral photodetectors are crucial for detecting light across a wide wavelength range, serving applications requiring precise wavelength specificity and spectral imaging capabilities. However, the development of these photodetectors is hindered by several challenges, including material compatibility issues, low responsivity, the complexity of signal processing, and precise bandgap engineering. A strategy is proposed using a MoS2-graphene photodetector to address these issues. Gate-tunable spectral responses are achieved in a graphene photodetector by utilizing carrier transfer from MoS2 and interfacial gating effects from a SiO2/p-doped Si substrate. Precise gate bias manipulation enables selective photocurrent capture in the range of 500–680 nm, identical to the absorption of MoS2. Furthermore, by applying a highly negative gate bias, photocurrent signals below the MoS2 bandgap, i.e., in the 680–800 nm region, are detected, significantly provoking broadband photodetection. The results highlight the versatility of gate-tunable multispectral response, leading to an exceptional responsivity of up to 1.4 × 105 mA W−1. Moreover, through the precise modulation of gate bias and incident wavelength, it seamlessly switches between negative and positive photocurrents. This study provides important insight into carrier photogeneration in sensitized graphene-based multifunctional optoelectronic devices, establishing a versatile platform for detecting a broad range of photocurrents with a single detector. © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
URI
https://pr.ibs.re.kr/handle/8788114/14619
DOI
10.1002/aelm.202300517
ISSN
2199-160X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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