IBS Publications Repository: Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics

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Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics

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Title: Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics

Subject: Charge conduction, ; Conductive atomic force microscopy, ; Diode effects, ; Electronic transport, ; Epitaxial thin films, ; Epitaxy systems, ; Flexoelectric, ; Flexoelectric effects, ; Flexoelectricity, ; Inhomogeneities, ; Local transport, ; Mechanical strain, ; Nano scale, ; Nano-scale materials, ; Nanoelectronic devices, ; Strain gradients, ; Atomic force microscopy, ; Dielectric materials, ; Epitaxial growth, ; Transportation, ; Nanotechnology

Abstract: Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design. © 2012 American Chemical Society.