Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics

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Title
Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics
Author(s)
Daesu Lee; Sang Mo Yang; Jong-Gul Yoon; Tae Won Noh
Publication Date
2012-12
Journal
NANO LETTERS, v.12, no.12, pp.6436 - 6440
Publisher
AMER CHEMICAL SOC
Abstract
Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design. © 2012 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/1419
ISSN
1530-6984
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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