Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films

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Title
Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films
Author(s)
Shin Buhm Lee; Kwangwoo Kim; Ji Seop Oh; Byungnam Kahng; Jae Sung Lee
Publication Date
2013-02
Journal
APPLIED PHYSICS LETTERS, v.102, no.6, pp.63501-1 - 63501-5
Publisher
AMER INST PHYSICS
Abstract
We investigated the origin of the variation in switching voltages in threshold-switching of VO2 thin films. When a triangular-waveform voltage signal was applied, the current changed abruptly at two switching voltages, i.e., VON (insulator-to-metal) and VOFF (metal-to-insulator). VON and VOFF were measured by changing the period of the voltage signal, the temperature of the environment, and the load resistance. We observed that either VON or V OFF varied significantly and had different dependences with respect to the external parameters. Based on the mechanism of the metal-insulator transition induced by Joule heating, numerical simulations were performed, which quantitatively reproduced all of the experimental results. From the simulation analysis, the variation in the switching voltages for threshold-switching was determined to be thermal in origin. © 2013 American Institute of Physics.
URI
https://pr.ibs.re.kr/handle/8788114/1387
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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