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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction

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Title
Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction
Author(s)
Park W.I.; You B.K.; Mun B.H.; Hyeon Kook Seo; Jeong Yong Lee; Hosaka S.; Yin Y.; Ross C.A.; Lee K.J.; Jung Y.S.
Publication Date
2013-03
Journal
ACS NANO, v.7, no.3, pp.2651 - 2658
Publisher
AMER CHEMICAL SOC
Abstract
Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and scalability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiOx layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiOx nanostructures is increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials. © 2013 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/1372
ISSN
1936-0851
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
Files in This Item:
43_IBS CA1201-3_ACS Nano_7-3_2651_Self-Assembled Incorporation.pdfDownload

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