Two opposite hysteresis curves in semiconductors with mobile dopants

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Title
Two opposite hysteresis curves in semiconductors with mobile dopants
Author(s)
Jae Sung Lee; Shin Buhm Lee; Byungnam Kahng; Tae Won Noh
Publication Date
2013-06
Journal
APPLIED PHYSICS LETTERS, v.102, no.25, pp.253503-1 - 253503-4
Publisher
AMER INST PHYSICS
Abstract
Semiconductors with mobile dopants (SMDs), which are distinct from conventional semiconductors, exhibit hysteretic current-voltage curves. The fundamental feature of this hysteresis curve is that it exhibits two oppositely rotating directions, whose origin is not clarified yet. Here, we investigate microscopic origin of the two types of curves and show that they result from the spatial inhomogeneity of the mobile dopant distribution in the SMD. In particular, we observed an abnormal modulation of the electronic energy band due to mobile dopants; lower (higher) density of dopants near a metal-semiconductor interface lead to higher (lower) conductance, whereas the conventional ionic models predict the reverse behaviors. © 2013 AIP Publishing LLC.
URI
https://pr.ibs.re.kr/handle/8788114/1321
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
2013-06-24-Applied Physics Letters-Two opposite hysteresis curves.pdfDownload

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