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A vacuum-deposited polymer dielectric for wafer-scale stretchable electronicsHighly Cited Paper

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dc.contributor.authorJa Hoon Koo-
dc.contributor.authorKang, Juyeon-
dc.contributor.authorLee, Sungjun-
dc.contributor.authorJun-Kyul Song-
dc.contributor.authorChoi, Junhwan-
dc.contributor.authorYoon, Jiyong-
dc.contributor.authorPark, Hong Jun-
dc.contributor.authorSung-Hyuk Sunwoo-
dc.contributor.authorDong Chan Kim-
dc.contributor.authorNam, Wangwoo-
dc.contributor.authorDae-Hyeong Kim-
dc.contributor.authorIm, Sung Gap-
dc.contributor.authorDonghee Son-
dc.date.accessioned2023-04-04T22:03:55Z-
dc.date.available2023-04-04T22:03:55Z-
dc.date.created2023-03-06-
dc.date.issued2023-02-
dc.identifier.issn2520-1131-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/13104-
dc.description.abstractA thin and stretchable polymer layer can be fabricated over large areas with high uniformity using a vacuum-deposition method and used as the gate dielectric in stretchy carbon-nanotube-based transistors and circuits that can function at 40% strain. Despite recent advances in materials and fabrication technologies, the development of intrinsically stretchable electronic devices with large-area uniformity, low power consumption and performance comparable with conventional rigid devices remains challenging. A key limitation is the absence of an elastic dielectric material that can be thin and uniform over large areas as well as offer robust insulating properties and high mechanical and chemical stability. Here we show that a vacuum-deposited elastic polymer layer can be used as the gate dielectric in stretchy field-effect transistors with carbon nanotube channels and microcracked gold electrodes. The polymer dielectric layer has high insulation properties (at a thickness below 200 nm), high stability and large-area uniformity. An 8-inch wafer array of the stretchable carbon nanotube transistors exhibits good uniformity in their electrical performance and can maintain their performance after 1,000 stretching cycles at 40% strain. We use the transistors to construct stretchy inverters and logic gates that can function under applied strains of up to 40%.-
dc.language영어-
dc.publisherNATURE PORTFOLIO-
dc.titleA vacuum-deposited polymer dielectric for wafer-scale stretchable electronics-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000925638100001-
dc.identifier.scopusid2-s2.0-85147380420-
dc.identifier.rimsid80128-
dc.contributor.affiliatedAuthorJa Hoon Koo-
dc.contributor.affiliatedAuthorJun-Kyul Song-
dc.contributor.affiliatedAuthorSung-Hyuk Sunwoo-
dc.contributor.affiliatedAuthorDong Chan Kim-
dc.contributor.affiliatedAuthorDae-Hyeong Kim-
dc.contributor.affiliatedAuthorDonghee Son-
dc.identifier.doi10.1038/s41928-023-00918-y-
dc.identifier.bibliographicCitationNATURE ELECTRONICS, v.6, no.2, pp.137 - 145-
dc.relation.isPartOfNATURE ELECTRONICS-
dc.citation.titleNATURE ELECTRONICS-
dc.citation.volume6-
dc.citation.number2-
dc.citation.startPage137-
dc.citation.endPage145-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusNANOTUBE-
dc.subject.keywordPlusDEVICES-
Appears in Collections:
Center for Nanoparticle Research(나노입자 연구단) > 1. Journal Papers (저널논문)
Center for Neuroscience Imaging Research (뇌과학 이미징 연구단) > 1. Journal Papers (저널논문)
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