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나노 구조 물리 연구단
나노구조물리 연구단
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Focused-Laser-Enabled p-n Junctions in Graphene Field-Effect Transistors

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Title
Focused-Laser-Enabled p-n Junctions in Graphene Field-Effect Transistors
Author(s)
Young Duck Kim; Myung-Ho Bae; Jung-Tak Seo; Yong Seung Kim; Hakseong Kim; Jae Hong Lee; Joung Real Ahn; SangWook Lee; Seung-Hyun Chun; Yun Daniel Park
Publication Date
2013-07
Journal
ACS NANO, v.7, no.7, pp.5850 - 5857
Publisher
AMER CHEMICAL SOC
Abstract
With its electrical carrier type as well as carrier-densities highly-sensitive to light, graphene is potentially an ideal candidate for many opto-electronic applications. Beyond the direct light-graphene interactions, indirect effects arising from induced charge traps underneath the photoactive graphene arising from light-substrate interactions must be better understood and harnessed. Here, we study the local doping effect in graphene using focused-laser irradiation, which governs the trapping and ejecting behavior of the charge trap-sites in the gate oxide. The local doping effect in graphene is manifested by a large Dirac voltage shifts and/or double Dirac peaks from the electrical measurements and a strong photocurrent response due to the formation of a p-n-p junction in gate-dependent scanning photocurrent microscopy. The technique of focused-laser irradiation on a graphene device suggests a new method to control the chargecarrier type and carrier concentration in graphene in a non-intrusive manner as well as elucidate strong light-substrate interactions in the ultimate performance of graphene devices.
URI
https://pr.ibs.re.kr/handle/8788114/1296
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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