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Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode

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Title
Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode
Author(s)
Van Tu Vu; Phan, Thanh Luan; Vu, Thi Thanh Huong; Park, Mi Hyang; Do, Van Dam; Bui, Viet Quoc; Kim, Kunnyun; Young Hee Lee; Yu, Woo Jong
Publication Date
2022-08
Journal
ACS NANO, v.16, no.8, pp.12073 - 12082
Publisher
AMER CHEMICAL SOC
Abstract
Copyright © 2022 American Chemical Society. In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 degrees C (first grown inner layer) and Nb-doped WS2 to 800 degrees C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 x 10(7)/cm(2) at 1.5 at.% Nb to approximately 1.16 x 10(13)/cm(2) at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to -band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (10(5)) and a minimum channel resistance (10(8) omega). With this optimized photodiode (8.1 at.% Nb at V-g = -30 V), an I-photo/I-dark ratio of 6000 and a detectivity of 1.1 x 10(14)Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions.
URI
https://pr.ibs.re.kr/handle/8788114/12870
DOI
10.1021/acsnano.2c02242
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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