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나노 구조 물리 연구단
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Quantum Dot-Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect

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Title
Quantum Dot-Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect
Author(s)
Chandan Biswas; Hyun Jeong; Mun Seok Jeong; Woo Jong Yu; Didier Pribat; Young Hee Lee
Publication Date
2013-08
Journal
ADVANCED FUNCTIONAL MATERIALS, v.23, no.29, pp.3653 - 3660
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Enhanced carrier–carrier interactions in hybrid nanostructures exhibit exceptional electronic and optoelectronic properties. Carbon nanotubes demonstrate excellent switching behavior with high on/off ratio and high mobility but do not show photoresponse in the visible range, whereas quantum dots (QDs) shows excellent optical response in various optical ranges which can be tuned with diameter. Here, a simple and effective way to develop hybrid phototransistors with extraordinary optoelectronic properties is presented by decorating semiconducting QDs on the surface of a single-walled carbon nanotube (SWCNT). This hybrid structure demonstrates clear negative photoresponse and optical switching behavior, which could be further tuned by applying external gate bias in the future. A clear type conversion of SWCNT transistor from p-type to n-type caused by a charge transfer from attached QDs to CNT is demonstrated. Moreover, this hybrid structure also demonstrates an enhancement in ‘optical Stark effect’ without applying any external electric fi eld. Charged SWCNT surface plays a key role behind the enhancement of optical Stark effect in QDs. The carrier dynamics of the QD and CNT heterostructures system highlights the potential application opportunity of the quantum dot systems, which can be adaptable to the current technologies.
URI
https://pr.ibs.re.kr/handle/8788114/1275
ISSN
1616-301X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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