BROWSE

Related Scientist

cces's photo.

cces
강상관계물질연구단
more info

ITEM VIEW & DOWNLOAD

Forming process of unipolar resistance switching in Ta2O5-x thin films

Cited 0 time in webofscience Cited 0 time in scopus
1,270 Viewed 368 Downloaded
Title
Forming process of unipolar resistance switching in Ta2O5-x thin films
Author(s)
Shin Buhm Lee; Hyang Keun Yoo; Bo Soo Kang
Subject
Dielectric breakdown, Resistance random-access memory (RRAM), Resistance switching
Publication Date
2013-09
Journal
CURRENT APPLIED PHYSICS, v.13, no.7, pp.1172 - 1174
Publisher
ELSEVIER SCIENCE BV
Abstract
We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v ¼ 20 mV s1 to 5 MV s1). Our results showed that the URS-EF was not influenced by the Ta2O5x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta2O5x thin films should be governed by thermally assisted dielectric breakdown in our measurement range. 2013 Elsevier B.V. All rights reserved.
URI
https://pr.ibs.re.kr/handle/8788114/1260
DOI
10.1016/j.cap.2013.02.011
ISSN
1567-1739
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
2013-Current Applied Physics-Forming process of unipolar resistance.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse