Forming process of unipolar resistance switching in Ta2O5-x thin films

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Title
Forming process of unipolar resistance switching in Ta2O5-x thin films
Author(s)
Shin Buhm Lee; Hyang Keun Yoo; Bo Soo Kang
Publication Date
2013-09
Journal
CURRENT APPLIED PHYSICS, v.13, no.7, pp.1172 - 1174
Publisher
ELSEVIER SCIENCE BV
Abstract
We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v ¼ 20 mV s1 to 5 MV s1). Our results showed that the URS-EF was not influenced by the Ta2O5x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta2O5x thin films should be governed by thermally assisted dielectric breakdown in our measurement range. 2013 Elsevier B.V. All rights reserved.
URI
https://pr.ibs.re.kr/handle/8788114/1260
ISSN
1567-1739
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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