Forming process of unipolar resistance switching in Ta2O5-x thin films
DC Field | Value | Language |
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dc.contributor.author | Shin Buhm Lee | - |
dc.contributor.author | Hyang Keun Yoo | - |
dc.contributor.author | Bo Soo Kang | - |
dc.date.available | 2015-04-20T06:45:11Z | - |
dc.date.created | 2014-08-11 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/1260 | - |
dc.description.abstract | We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v ¼ 20 mV s1 to 5 MV s1). Our results showed that the URS-EF was not influenced by the Ta2O5x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta2O5x thin films should be governed by thermally assisted dielectric breakdown in our measurement range. 2013 Elsevier B.V. All rights reserved. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | Dielectric breakdown, Resistance random-access memory (RRAM), Resistance switching | - |
dc.title | Forming process of unipolar resistance switching in Ta2O5-x thin films | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000322631400002 | - |
dc.identifier.scopusid | 2-s2.0-84885586399 | - |
dc.identifier.rimsid | 205 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Shin Buhm Lee | - |
dc.contributor.affiliatedAuthor | Hyang Keun Yoo | - |
dc.identifier.doi | 10.1016/j.cap.2013.02.011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, no.7, pp.1172 - 1174 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1172 | - |
dc.citation.endPage | 1174 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.scptc | 0 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |