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Forming process of unipolar resistance switching in Ta2O5-x thin films

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dc.contributor.authorShin Buhm Lee-
dc.contributor.authorHyang Keun Yoo-
dc.contributor.authorBo Soo Kang-
dc.date.available2015-04-20T06:45:11Z-
dc.date.created2014-08-11-
dc.date.issued2013-09-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1260-
dc.description.abstractWe investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v ¼ 20 mV s1 to 5 MV s1). Our results showed that the URS-EF was not influenced by the Ta2O5x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta2O5x thin films should be governed by thermally assisted dielectric breakdown in our measurement range. 2013 Elsevier B.V. All rights reserved.-
dc.description.uri1-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectDielectric breakdown, Resistance random-access memory (RRAM), Resistance switching-
dc.titleForming process of unipolar resistance switching in Ta2O5-x thin films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000322631400002-
dc.identifier.scopusid2-s2.0-84885586399-
dc.identifier.rimsid205ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorShin Buhm Lee-
dc.contributor.affiliatedAuthorHyang Keun Yoo-
dc.identifier.doi10.1016/j.cap.2013.02.011-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.13, no.7, pp.1172 - 1174-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume13-
dc.citation.number7-
dc.citation.startPage1172-
dc.citation.endPage1174-
dc.date.scptcdate2018-10-01-
dc.description.scptc0-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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