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Tuning Positive and Negative Transconductance in Multilayer MoS2 with Indium Contacts

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Title
Tuning Positive and Negative Transconductance in Multilayer MoS2 with Indium Contacts
Author(s)
Dong Hwan Choi; Ji, Hyunjin; Han, Gang Hee; Byoung Hee Moon; Young Hee Lee
Publication Date
2022-07
Journal
PHYSICAL REVIEW APPLIED, v.18, no.1
Publisher
AMER PHYSICAL SOC
Abstract
© 2022 American Physical Society. We report unusual behavior in the transconductance of multilayer MoS2 at a low temperature. Multilayer MoS2 with indium top contacts exhibits negative transconductance at an intermediate back-gate bias and reentrant positive transconductance at a higher back-gate bias. We further determine that the transconductance can be modulated via controlling the channel length, which originates from competition between the intralayer in-plane transport and interlayer vertical transport. These features emerge owing to the van der Waals contact between indium and MoS2 and become more prominent as the sample thickness increases. Our results provide further insights for carrier transport in multilayer MoS2 and its practical applications.
URI
https://pr.ibs.re.kr/handle/8788114/12383
DOI
10.1103/PhysRevApplied.18.014068
ISSN
2331-7019
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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